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APTGT35H120T1G
Full - Bridge Fast Trench + Field Stop IGBT(R) Power Module
3 Q1 5 6 Q2 7 1 Q4 CR2 CR4 9 4 Q3 CR1 CR3 2
VCES = 1200V IC = 35A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Fast Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Very low stray inductance - Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a phase leg of twice the current capability * RoHS Compliant
8 11 NTC
10 12
Pins 3/4 must be shorted together
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1200 55 35 70 20 208 70A@1150V Unit V
August, 2007 1-5 APTGT35H120T1G - Rev 0
A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT35H120T1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V VCE = 1200V Tj = 25C Tj = 125C Tj = 25C VGE = 15V IC = 35A Tj = 125C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Min Typ Max 250 500 2.1 6.5 400 Unit A V V nA
5.0
1.7 2.0 5.8
Dynamic Characteristics
Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 35A RG = 27 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 35A RG = 27 VGE = 15V Tj = 125C VBus = 600V IC = 35A Tj = 125C RG = 27 Min Typ 2.5 0.15 90 30 420 70 90 50 520 90 3.5 mJ 4.1 Max Unit nF
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 35A VR = 600V IF = 35A Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C 35 1.6 1.6 170 280 3.5 7 1.4 2.7 Min 1200 Typ Max 250 500 2.1 Unit V A A V ns C mJ
August, 2007 2-5 APTGT35H120T1G - Rev 0
VR=1200V
di/dt =1500A/s
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APTGT35H120T1G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.60 0.95 150 125 100 4.7 80 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 - T25 T
Min
Typ 50 3952
Max
Unit k K
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
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APTGT35H120T1G - Rev 0
August, 2007
APTGT35H120T1G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 70 60
TJ=125C TJ = 125C
70 60 50
IC (A)
TJ=25C
50 IC (A) 40 30 20 10 0
VGE=17V
VGE=13V VGE=15V VGE=9V
40 30 20 10 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5
0
1
2 VCE (V)
3
4
80 70 60 50 IC (A) 40 30 20 10 0 5
Transfert Characteristics 8
TJ=25C
Energy losses vs Collector Current 7 6 E (mJ) 5 4 3 2 1 0 10 11 0 10 20 30 40 IC (A) Reverse Bias Safe Operating Area 80 50 60 70 80
VCE = 600V VGE = 15V RG = 27 TJ = 125C Eon Eoff Eon
TJ=125C
Er
TJ=25C
6
7
8 VGE (V)
9
Switching Energy Losses vs Gate Resistance 8 7 6 E (mJ) 5 4 3 2 1 0 20 40 60 80 Gate Resistance (ohms) 100 0 0
Eon Er VCE = 600V VGE =15V IC = 35A TJ = 125C Eon
60 IC (A)
Eoff
40
VGE=15V TJ=125C RG=27
20
300
600 900 VCE (V)
1200
1500
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10
IGBT
0.9 0.7 0.5 0.3 0.1
rectangular Pulse Duration (Seconds)
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APTGT35H120T1G - Rev 0
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APTGT35H120T1G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 80 70 60 50 40 30 20 10 0 0 10 20 30 IC (A) 40 50 60
hard switching ZCS ZVS VCE=600V D=50% RG=27 TJ=125C TC=75C
Forward Characteristic of diode 70 60 50 IF (A) 40 30 20 10 0 0 0.5 1
TJ=25C TJ=125C TJ=125C
1.5 VF (V)
2
2.5
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.9 0.8 0.6 0.4 0.2 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
Diode
0 0.00001
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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August, 2007

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